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MOSFET 3 N-CH 60V/100V 9BGA

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - iiArrays
Manufacturer EPC
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 100µA, 2.5V @ 20µA
Series eGaN®
Power - Max -
Package / Case 9-VFBGA
Operating Temperature -40°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 0.22nC @ 5V, 0.044nC @ 5V
FET Feature GaNFET (Gallium Nitride)
Detailed Description Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 9-BGA (1.35x1.35)
Rds On (Max) @ Id, Vgs 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Packaging Tape & Reel (TR)
Other Names 917-1169-2
Mounting Type Surface Mount
Manufacturer Standard Lead Time 14 Weeks
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 30V, 7pF @ 30V
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Drain to Source Voltage (Vdss) 60V, 100V
Current - Continuous Drain (Id) @ 25°C 1.7A, 500mA
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